CXK5T81000AM Просмотр технического описания (PDF) - Sony Semiconductor

Номер в каталоге

Компоненты Описание

производитель

CXK5T81000AM

131072-word x 8-bit High Speed CMOS Static RAM

Sony Semiconductor 

Data retention waveform

• Low supply voltage data retention waveform (1) (CE1 contol)

tCDRS

Data retention mode

tR

VCC

3.0V

2.2V

VDR

CE1

GND

CE1 ≥ VCC – 0.2V

• Low supply voltage data retention waveform (2) (CE2 contol)

VCC

3.0V

CE2

VDR

Data retention mode

tCDRS

tR

0.4V

GND

CE2 ≤ 0.2V

CXK5T81000ATM/AYM/AM

Data Retention Characteristics

Item

Symbol

Test conditions

Min.

Data retention voltage

VDR

∗1

2.0

Data retention current

ICCDR1 VCC = 3.0V∗1

ICCDR2 VCC = 2.0 to 3.6V∗1

–25 to +85°C —

–25 to +70°C —

+25°C

—

—

Data retention setup time tCDRS Chip disable to data retention mode

0

Recovery time

tR

5

∗1 CE1 ≥ Vcc –0.2V, CE2 ≥ Vcc –0.2V (CE1 control) or CE2 ≤ 0.2V (CE2 control)

∗2 VCC = 3.3V, Ta = 25°C

(Ta = –25 to +85°C)

Typ. Max. Unit

—

3.6 V

—

24

—

12 µA

0.4

—

0.48∗2 28 µA

—

— ns

—

— ns

–9–

Share Link: