CXA1829N Просмотр технического описания (PDF) - Sony Semiconductor
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CXA1829N Datasheet PDF : 15 Pages
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CXA1829N
Unless otherwise specified, VCC = 5 V, Ta = 25 °C, fWD (Write data frequency) = 5 MHz, IW = 15 mA, LH (head
inductance) = 1 µH, RH (head DC resistance) = 30 Ω
Refer to Measurement Circuit 2 and Timing Chart.
Item
Symbol
Measurement conditions
Min. Typ. Max. Unit
Head differential
voltage amplitude
Potential difference between HX and
VSW HY pins when Write current is 4.4
5.2
switched.
Vp-p
Write-unsafe detection
FWUS is the Write data frequency
FWUS
maximum frequency
when WUS pin is high in Write mode.
280 1000 kHz
Mode switching time
Read to Write
Time required for Write current to
TRW reach 90% after Read mode is
switched to Write mode.
Mode switching time
Read to Simultaneous
Write
Time required for Write current to
reach 90% after Read mode is
TRS
switched to Simultaneous Write
mode.
Mode switching time
Write to Read
Time required for Write current to
TWR reach 10% after Write mode is
switched to Read mode.
Mode switching time
Safe to Unsafe
Time required for WUS pin to
TSA1 become high after the Write data is 3
stopped in Write mode.
Mode switching time
Unsafe to Safe
TSA2
Time required for WUS pin to
become low after the Write data is
input in Write mode.
Mode switching time
Power save to Read
Time required for RD output to reach
TPR 90% after Power Save mode is
switched to Read mode.
Time required for RD output to reach
Head switching time
TH 90% when the selected head is
changed in Read mode.
LH = 0, RH = 0
Write current
Time required for Write current to
TPD
propagation delay time
reach 90% after the Write data falling
edge.
LH = 0, RH = 0
Write current rise/fall
time
TR is the time required for Write
TR/TF current to reach 90% from 10%; TF is
the time required for it to reach 10%
from 90%.
0.6
0.6
0.6
µs
7
11
1.0
1.0
0.6
16
30
ns
5
10
—7—
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