CSC2712L Просмотр технического описания (PDF) - Continental Device India Limited
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CSC2712L Datasheet PDF : 3 Pages
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Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
SOT-23 Formed SMD Package
IS/ISO 9002
IS / IECQC 700000
Lic# QSC/L- 000019.2 IS / IECQC 750100
CSC2712
SILICON PLANAR EPITAXIAL TRANSISTOR
N-P-N transistor
Marking
CSC2712Y=1E
CSC2712GR(G)=1F
CSC2712BL(L)=1G
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (peak value)
Total power dissipation at Tamb = 25°C
Junction temperature
D.C. current gain
–IC = 2 mA; –VCE = 6V
Transition frequency
IC = 1 mA; VCE = 10 V
Noise figure at RS = 10 KW
IC = 0.1 mA; VCE = 6V;
f = 1 kHz
VCBO
VCEO
VEBO
IC
Ptot
Tj
hFE
fT
max.
max.
max.
max.
max.
max.
60 V
50 V
5V
150 mA
150 mW
150 ° C
min.
70
max. 700
min.
80 MHz
F
max
10 dB
Continental Device India Limited
Data Sheet
Page 1 of 3
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