STA50013TR Просмотр технического описания (PDF) - STMicroelectronics
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STA50013TR Datasheet PDF : 12 Pages
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STA500
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCE
Vmax
Top
Tstg, Tj
DC Supply Voltage (Pin 4,7,12,15)
Maximum Voltage on pins (23 to 32)
Operating Temperature Range
Storage and Junction Temperature
Value
Unit
40
V
5.5
V
0 to 70
°C
-40 to 150
°C
THERMAL DATA
Symbol
Tj-case
t(s) TjSD
c Twarn
u thSD
Parameter
Thermal Resistance Junction to Case (thermal pad)
Thermal shut-down junction temperature
Thermal warning temperature
Thermal shut-down hysteresis
Min.
Typ.
150
130
25
Max.
2.5
Unit
°C/W
°C
°C
°C
Prod t(s) ELECTRICAL CHARACTERISTCS
lete uc (Ibias = 3.3V; Vcc = 28V; Tamb = 25°C unless otherwise specified)
d Symbol
Parameter
Test conditions
so ro RdsON Power Pchannel/Nchannel
b P MOSFET RdsON
Id=1A;
- O te Idss Power Pchannel/Nchannel
) le leakage Idss
Vcc=35V
t(s o gN Power Pchannel RdsON
s Matching (*)
Id=1A
c b gP Power Nchannel RdsON
u O Matching (*)
Id=1A
rod ) - Dt_s Low current Dead Time (static) see test circuit no.1; see fig. 1
P t(s Dt_d High current Dead Time (dinamic) L=22µH; C = 470nF; Rl = 8Ω
Id = 3.5A; see fig. 3
lete uc td ON Turn-on delay time
Resistive load
d td OFF Turn-off delay time
Resistive load
so ro tr
Rise time
Resistive load; as fig. 1
b P tf
Fall time
Resistive load; as fig. 1
O te VCC Supply voltage operating voltage
le VIN-H High level input voltage
Obso VIN-L Low level input voltage
Min.
Typ. Max. Unit
200 270 mΩ
50
µA
95
%
95
%
10
20
ns
50
ns
9
Ibias/2
+300mV
100
ns
100
ns
25
ns
25
ns
VOV
V
V
Ibias/2 V
-300mV
IIN-H Hi level Input current
Pin voltage=Ibias
1
µA
IIN-L Low level input current
Pin voltage = 0.3V
1
µA
IPWRDN-H Hi level PWRDN pin input current Ibias = 3.3V
35
µA
VL Low logical state voltage VL (pin Ibias = 3.3V
PWRDN, TRISTATE) (note 1)
0.8
V
VH High logical state voltage VH (pin Ibias = 3.3V
1.7
V
PWRDN, TRISTATE) (note 1)
4/11
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