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CS5165 Просмотр технического описания (PDF) - ON Semiconductor

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CS5165 Datasheet PDF : 21 Pages
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CS5165
ELECTRICAL CHARACTERISTICS (continued) (0°C < TA < +70°C; 0°C < TJ < +125°C; 8.0 V < VCC < 14 V; 2.8 DAC Code:
(VID4 = VID2 = VID1 = VID0 = 1; VID3 = 0); CGATE(H) and CGATE(L) = 3.3 nF; COFF = 330 pF; CSS = 0.1 μF, unless otherwise specified.)
Characteristic
Test Conditions
Min
Typ
Max
Unit
Fault Protection
SS Charge Time
SS Pulse Period
SS Duty Cycle
VFB = 0 V
VFB = 0 V
(Charge Time/Period) × 100
1.6
3.3
5.0
ms
25
100
200
ms
1.0
3.3
6.0
%
SS COMP Clamp Voltage
VFB Low Comparator
PWM Comparator
VFB = 2.7 V; VSS = 0 V
0.50
0.95
1.10
V
Increase VFB till no SS pulsing and normal Offtime
0.9
1.0
1.1
V
Transient Response
VFB = 1.2 to 5.0 V. 500 ns after GATE(H)
(after Blanking time) to GATE(H) = (VCC 1.0 V)
to 1.0 V
100
150
ns
Minimum Pulse Width
(Blanking Time)
COFF
Normal OffTime
Extended OffTime
TimeOut Timer
TimeOut Time
Fault Duty Cycle
Enable Input
Drive VFB. 1.2 to 5.0 V upon GATE(H) rising edge
50
(> VCC 1.0 V), measure GATE(H) pulse width
VFB = 2.7 V
1.0
VSS = VFB = 0 V
5.0
VFB = 2.7 V, Measure GATE(H) Pulse Width
10
VFB = 0V
30
150
250
ns
1.6
2.3
μs
8.0
12.0
μs
30
50
μs
50
70
%
ENABLE Threshold
GATE(H) Switching
0.8
1.15
1.30
V
Shutdown delay (Note 3)
ENABLEtoGATE(H) < 2.0 V
3.0
μs
Pullup Current
ENABLE = 0 V
3.0
7.0
15
μA
Pullup Voltage
No load on ENABLE pin
1.30
1.8
3.0
V
Input Resistance
ENABLE = 5.0 V, R = (5.0 V VPULLUP)/IENABLE
10
Power Good Output
Low to High Delay
VFB = (0.8 × VDAC) to VDAC
30
High to Low Delay
VFB = VDAC to (0.8 × VDAC)
30
Output Low Voltage
VFB = 2.4 V, IPWRGD = 500 μA
Sink Current Limit
VFB = 2.4 V, PWRGD = 1.0 V
0.5
3. Guaranteed by design, not 100% tested in production.
20
50
kΩ
65
110
μs
75
120
μs
0.2
0.3
V
4.0
15.0
mA
http://onsemi.com
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