CS5165
ABSOLUTE MAXIMUM RATINGS
Pin Name
Pin Symbol
IC Power Input
VCC
Soft Start Capacitor
SS
Compensation Capacitor
COMP
Voltage Feedback Input
Off−Time Capacitor
Voltage ID DAC Inputs
High−Side FET Driver
VFB
COFF
VID0−VID4
GATE(H)
Low−Side FET Driver
GATE(L)
Enable Input
ENABLE
Power Good Output
PWRGD
Power Ground
PGND
Logic Ground
LGND
VMAX
16 V
6.0 V
6.0 V
6.0 V
6.0 V
6.0 V
16 V
16 V
6.0 V
6.0 V
0V
0V
VMIN
−0.3 V
−0.3 V
−0.3 V
−0.3 V
−0.3 V
−0.3 V
−0.3 V
−0.3 V
−0.3 V
−0.3 V
0V
0V
ISOURCE
N/A
200 μA
10 mA
10 μA
1.0 mA
1.0 mA
1.5 A peak, 200 mA DC
1.5 A peak, 200 mA DC
100 μA
10 μA
1.5 A peak, 200 mA DC
100 mA
ISINK
1.5 A peak, 200 mA DC
10 μA
1.0 mA
10 μA
50 mA
10 μA
1.5 A peak, 200 mA DC
1.5 A peak, 200 mA DC
1.0 mA
30 mA
N/A
N/A
ELECTRICAL CHARACTERISTICS (0°C < TA < +70°C; 0°C < TJ < +125°C; 8.0 V < VCC < 14 V; 2.8 DAC Code:
(VID4 = VID2 = VID1 = VID0 = 1; VID3 = 0); CGATE(H) and CGATE(L) = 3.3 nF; COFF = 330 pF; CSS = 0.1 μF, unless otherwise specified.)
Characteristic
Test Conditions
Min
Typ
Max
Unit
VCC Supply Current
Operating
1.0 V < VFB < VDAC (max on−time)
No Loads on GATE(H) and GATE(L)
−
12
20
mA
Sleep Mode
ENABLE = 0 V
−
300
600
μA
VCC Monitor
Start Threshold
GATE(H) switching
3.75
3.95
4.15
V
Stop Threshold
GATE(H) not switching
3.65
3.87
4.05
V
Hysteresis
Start−Stop
−
80
−
mV
Error Amplifier
VFB Bias Current
COMP Source Current
COMP CLAMP Voltage
VFB = 0 V
COMP = 1.2 V to 3.6 V; VFB = 2.7 V
VFB = 2.7 V, Adjust COMP voltage for Comp
current = 50 μA
−
0.1
1.0
μA
15
30
60
μA
0.85
1.0
1.15
V
COMP Clamp Current
COMP Sink Current
Open Loop Gain
COMP = 0 V
VCOMP = 1.2 V; VFB = 3.0 V; VSS > 2.5 V
Note 2
0.4
1.0
1.6
mA
180
400
800
μA
50
60
−
dB
Unity Gain Bandwidth
Note 2
0.5
2.0
−
MHz
PSRR @ 1.0 kHz
Note 2
60
85
−
dB
GATE(H) and GATE(L)
High Voltage at 100 mA
Low Voltage at 100 mA
Measure VCC − GATE
Measure GATE
−
1.2
2.0
V
−
1.0
1.5
V
Rise Time
Fall Time
GATE(H) to GATE(L) Delay
1.6 V < GATE < (VCC − 2.5 V)
(VCC − 2.5 V) > GATE > 1.6 V
GATE(H) < 2.0 V; GATE(L) > 2.0 V
−
40
80
ns
−
40
80
ns
30
65
100
ns
GATE(L) to GATE(H) Delay
GATE pull−down
GATE(L) < 2.0 V; GATE(H) > 2.0 V
Resistor to PGND, Note 2
30
65
100
ns
20
50
115
kΩ
2. Guaranteed by design, not 100% tested in production.
http://onsemi.com
3