CRG03(2006) Просмотр технического описания (PDF) - Toshiba
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CRG03 Datasheet PDF : 4 Pages
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TOSHIBA Rectifier Silicon Diffused Type
CRG03
General Purpose Rectifier Applications
• Average forward current: IF (AV) = 1.0 A
• Repetitive peak reverse voltage: VRRM = 400 V
• Suitable for compact assembly due to small surface-mount package
“S−FLATTM” (Toshiba package name)
CRG03
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive Peak Reverse Voltage
Average Forward Current
Peak One Cycle Surge Forward
Current (Non−Repetitive)
VRRM
400
V
IF (AV)
1.0（Note）
A
IFSM
15.0 (50Hz)
A
16.5 (60Hz)
Junction Temperature
Storage Temperature Range
Tj
−40~150
°C
Tstg
−40~150
°C
Note: 1 Ta = 56°C
Device mounted on a ceramic board
board size: 50 mm × 50 mm
soldering land: 2 mm × 2 mm
board thickness 0.64t
JEDEC
―
JEITA
―
TOSHIBA
3-2A1A
Weight: 0.013 g (typ.)
Note 2:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Thermal resistance
Symbol
VFM(1)
VFM(2)
VFM(3)
IRRM
Rth (j-a)
Rth (j-ℓ)
Test Condition
IFM = 0.1 A (Pulse test)
IFM = 0.7 A (Pulse test)
IFM = 1.0 A (Pulse test)
VRRM = 400 V (Pulse test)
Device mounted on a ceramic board
Board size: 50 mm × 50 mm
Soldering land: 2 mm × 2 mm
Board thickness: 0.64t
Device mounted on a glass-epoxy
board
Board size: 50 mm × 50 mm
Soldering land: 6 mm × 6 mm
Board thickness: 1.6t
―
Min Typ. Max Unit
⎯ 0.86 ⎯
V
⎯ 0.97 1.1
V
⎯
1.0
⎯
V
⎯
⎯
10
μA
⎯
⎯
65
°C/W
⎯
⎯
130
⎯
⎯
20 °C/W
1
2006-11-06
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