CRF24060 Просмотр технического описания (PDF) - Cree, Inc

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CRF24060

60 W, SiC RF Power MESFET

Cree, Inc 

PRELIMINARY

CRF24060

60 W, SiC RF Power MESFET

Cree’s CRF24060 is an unmatched silicon carbide (SiC) RF power Metal-

Semiconductor Field-Effect Transistor (MESFET). SiC has superior

properties compared to silicon or gallium arsenide, including higher

breakdown voltage, higher saturated electron drift velocity, and higher

thermal conductivity. SiC MESFETs offer greater efficiency, greater power

density, and wider bandwidths compared to Si and GaAs transistors.

FEATURES

APPLICATIONS

PackagPeNT:ypCeR:F2444006109F3

• 13 dB Small Signal Gain

• High Efficiency

• 50 W minimum P1dB

• Up to 2400 MHz Operation

• 48 V Operation

• High Breakdown Voltage

• High Temperature Operation

• Wideband Military Communications

• Secure Comms for Homeland Defense

• Class A, A/B Amplifiers

• TDMA, EDGE, CDMA, W-CDMA

• Broadband Amplifiers

• MMDS

Typical Performance

• Drain Efficiency of 45% at 1500 MHz at 60 W POUT

• IMD -31 dBc at 1000 MHz at 50 W PEP

• 13 dB Small Signal Gain at 1500 MHz

• 60 W @ P1dB at 1500 MHz

• 80 W P3dB at 1500 MHz

Note: Measured in amplifier circuit CRF24060-TB at VDS = 48 V, IDQ = 2000 mA.

Subject to change without notice.

www.cree.com/wireless



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