CPH3355(2010) Просмотр технического описания (PDF) - SANYO -> Panasonic
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производитель
CPH3355 Datasheet PDF : 4 Pages
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Ordering number : ENA1905
CPH3355
SANYO Semiconductors
DATA SHEET
CPH3355
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• ON-resistance RDS(on)1=120mΩ(typ.)
• 4V drive
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
Unit
--30
V
±20
V
--2.5
A
--10
A
1
W
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7015A-004
2.9
0.15
3
Product & Package Information
• Package
: CPH3
• JEITA, JEDEC
: SC-59, TO-236, SOT-23
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
0.05
1
0.95
2
0.4
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
TL
Electrical Connection
3
1
2
http://semicon.sanyo.com/en/network
D2210PE TKIM TC-00002536 No. A1905-1/4
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