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CP2400-GM Просмотр технического описания (PDF) - Silicon Laboratories

Номер в каталоге
Компоненты Описание
производитель
CP2400-GM
Silabs
Silicon Laboratories Silabs
CP2400-GM Datasheet PDF : 110 Pages
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CP2400/1/2/3
Table 3.2. Port I/O DC Electrical Characteristics
VDD = 1.8 to 3.6 V, –40 to +85 °C unless otherwise specified.
Parameters
Output High Voltage
Conditions
High Drive Strength, PnDRV.n = 1
IOH = –3 mA, Port I/O push-pull
IOH = –10 µA, Port I/O push-pull
IOH = –10 mA, Port I/O push-pull
Low Drive Strength, PnDRV.n = 0
Min
Typ
Max Units
VDD – 0.7
VDD – 0.1
See Chart
V
Output Low Voltage
Input High Voltage
Input Low Voltage
Input Leakage
Current
IOH = –1 mA, Port I/O push-pull
IOH = –10 µA, Port I/O push-pull
IOH = –3 mA, Port I/O push-pull
High Drive Strength, PnDRV.n = 1
VDD – 0.7
VDD – 0.1
See Chart
IOL = 8.5 mA
IOL = 10 µA
0.6
0.1
IOL = 15 mA
See Chart
V
Low Drive Strength, PnDRV.n = 0
IOL = 1.4 mA
IOL = 10 µA
IOL = 4 mA
VDD = 2.0 to 3.6 V
VDD = 1.8 to 2.0 V
0.6
0.1
See Chart
VDD – 0.6
0.7 x VDD
V
V
VDD = 2.0 to 3.6 V
0.6
V
VDD = 1.8 to 2.0 V
Weak Pullup On, VIN = 0 V, VDD = 1.8 V
Weak Pullup On, Vin = 0 V, VDD = 3.6 V
0.3 x VDD V
4
µA
20
30
Rev. 1.0
13

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