130N30 Просмотр технического описания (PDF) - IXYS CORPORATION
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производитель
130N30 Datasheet PDF : 4 Pages
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IXFN 130N30
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG(on)
QGS
QGD
RthJC
RthCK
VDS = 10 V; ID = 60A, pulse test
70
92
S
14500
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
2650
pF
610
pF
45
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
75
ns
RG = 1 Ω (External),
130
ns
31
ns
380
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
95
nC
180
nC
0.18 K/W
0.05
K/W
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
130 A
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = 100A, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = 30A, -di/dt = 100 A/µs, VR = 100 V
QRM
IRM
520 A
1.5 V
250 ns
0.8
µC
8
A
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min.
Max.
31.50
7.80
31.88
8.20
4.09
4.29
4.09
4.29
4.09
14.91
4.29
15.11
30.12
38.00
30.30
38.23
11.68
8.92
12.22
9.60
0.76
12.60
0.84
12.85
25.15
1.98
25.42
2.13
4.95
26.54
5.97
26.90
3.94
4.42
4.72
4.85
24.59
-0.05
25.07
0.1
Inches
Min.
Max.
1.240
0.307
1.255
0.323
0.161
0.161
0.169
0.169
0.161
0.587
0.169
0.595
1.186
1.496
1.193
1.505
0.460
0.351
0.481
0.378
0.030
0.496
0.033
0.506
0.990
0.078
1.001
0.084
0.195
1.045
0.235
1.059
0.155
0.186
0.174
0.191
0.968
-0.002
0.987
0.004
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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