130N30 Просмотр технического описания (PDF) - IXYS CORPORATION
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130N30 Datasheet PDF : 4 Pages
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HiPerFETTM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
IXFN 130N30
D
G
V = 300 V
DSS
ID25 = 130 A
= RDS(on) 22 mΩ
trr < 250 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IL(RMS)
I
DM
I
AR
EAR
EAS
dv/dt
P
D
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
Terminal (current limit)
T
C
=
25°C,
pulse
width
limited
by
T
JM
T
C
= 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
T
C
= 25°C
50/60 Hz, RMS t = 1 min
I
ISOL
≤
1
mA
t=1s
Mounting torque
Terminal connection torque
S
S
Maximum Ratings
300
V
300
V
±20
V
±30
V
130
A
100
A
520
A
100
A
85
mJ
4
J
5 V/ns
700
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• Internationalstandardpackages
• miniBLOC, with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• FastintrinsicRectifier
Symbol
V
DSS
VGH(th)
IGSS
IDSS
RDS(on)
Test Conditions
V = 0 V, I = 3 mA
GS
D
VDS = VGS, ID = 8 mA
VGS = ±20 VDC, VDS = 0
VDS = VDSS
V =0V
GS
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t ≤ 300 µs,
duty cycle d ≤ 2 %
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
300
2
TJ = 25°C
T
J
=
125°C
V
4V
±200 nA
100 µA
2 mA
22 m Ω
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
© 2003 IXYS All rights reserved
DS98531F(01/03)
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