IXFR90N30 Просмотр технического описания (PDF) - IXYS CORPORATION
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Компоненты Описание
производитель
IXFR90N30 Datasheet PDF : 2 Pages
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Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Q
gd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = IT
Notes 2, 3
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
RG = 2.0 W (External), Notes 2, 3
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
40 70
S
10000
pF
1800
pF
700
pF
42
ns
55
ns
100
ns
40
ns
360
nC
60
nC
180
nC
0.30 K/W
0.15
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
ISM
Repetitive; Note 1
V
I = I , V = 0 V, Notes 2, 3
SD
F
T GS
trr
QRM
I
IF = 50A,-di/dt = 100 A/ms, VR = 100 V
RM
90 A
360 A
1.5 V
250 ns
1.4
mC
10
A
IXFR 90N30
ISOPLUS 247 OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim. Millimeter
Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e
5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
Note: 1. Pulse width limited by TJM
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
3. IT = 45A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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