CMPD2004S(2003) Просмотр технического описания (PDF) - Central Semiconductor
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CMPD2004S Datasheet PDF : 2 Pages
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CentralTM
Semiconductor Corp.
CMPD2003
CMPD2003C
CMPD2003S
CMPD2004
CMPD2004A
CMPD2004C
CMPD2004S
SURFACE MOUNT
HIGH VOLTAGE
SILICON SWITCHING DIODE
ELECTRICAL CHARACTERISTICS PER DIODE:
SYMBOL TEST CONDITIONS
(TA=25°C unless otherwise noted)
CMPD2004
CMPD2003
CMPD2004A
CMPD2003C
CMPD2004C
CMPD2003S
CMPD2004S
MIN MAX
MIN MAX
UNITS
BVR
IR=100µA
250
300
V
IR
VR=200V
100
-
nA
IR
VR=200V, TA=150°C
100
-
µA
IR
VR=240V
-
100
nA
IR
VR=240V, TA=150°C
-
100
µA
VF
IF=100mA
1.0
1.0
V
VF
IF=200mA
1.25
-
V
CT
VR=0V, f=1.0 MHz
5.0
5.0
pF
trr
IR=IF=30mA, RL=100Ω, Rec. to 3.0mA
50
50
ns
SOT-23 CASE - MECHANICAL OUTLINE
2
1
3
LEAD CODE:
CMPD2003
CMPD2004
1) Anode
2) No Connection
3) Cathode
MARKING CODE:
SEE PREVIOUS PAGE
2
D1
1
D2
2
D1
1
D2
2
D1
1
D2
3
LEAD CODE:
CMPD2004A
1) Cathode D2
2) Cathode D1
3) Anode D1, Anode D2
3
3
LEAD CODE:
CMPD2003C
CMPD2004C
1) Anode D2
2) Anode D1
3) Cathode D1, Cathode D2
LEAD CODE:
CMPD2003S
CMPD2004S
1) Anode D2
2) Cathode D1
3) Anode D1, Cathode D2
R7 (6-August 2003)
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