TS4900 Просмотр технического описания (PDF) - STMicroelectronics
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производитель
TS4900 Datasheet PDF : 19 Pages
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TS4900
Fig. 15 : Pout @ THD + N = 1% vs Supply
Voltage vs RL
Fig. 16 : Pout @ THD + N = 10% vs Supply
Voltage vs RL
1.0
Gv = 2 & 10
Cb = 1µF
0.8 F = 1kHz
BW < 125kHz
Tamb = 25οC
0.6
8Ω
4Ω
16 Ω
1.2
Gv = 2 & 10
Cb = 1µF
1.0 F = 1kHz
4Ω
BW < 125kHz
8Ω
0.8 Tamb = 25°C
0.6
16 Ω
0.4
0.4
0.2
) 32 Ω
t(s 0.0
2.5
3.0
3.5
4.0
4.5
5.0
Vcc (V)
0.2
32 Ω
0.0
2.5
3.0
3.5
4.0
4.5
5.0
Vcc (V)
Product(s) Fig. 17 : Power Dissipation vs Pout
te c 1.4
le u Vcc=5V
d 1.2 f=1kHz
so ro THD+N<1%
1.0
RL=4Ω
b P 0.8
) - O lete 0.6
RL=8Ω
t(s o 0.4
c bs 0.2
RL=16Ω
du O 0.0
- 0.0
0.2
0.4
0.6
0.8
1.0
ro ) Output Power (W)
Fig. 18 : Power Dissipation vs Pout
0.6
Vcc=3.3V
0.5 f=1kHz
THD+N<1%
0.4
RL=4Ω
0.3
0.2
0.1
0.0
0.0
RL=8Ω
RL=16Ω
0.2
0.4
0.6
Output Power (W)
lete P uct(s Fig. 19 : Power Dissipation vs Pout
so rod 0.40
b P 0.35 Vcc=2.6V
O te f=1kHz
0.30 THD+N<1%
le 0.25
so0.20
Ob 0.15
RL=4Ω
Fig. 20 : Power Derating Curves
RL=8Ω
0.10
0.05
RL=16Ω
0.00
0.0
0.1
0.2
0.3
Output Power (W)
8/19
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