CM1630-04DE(2011) Просмотр технического описания (PDF) - ON Semiconductor
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CM1630-04DE Datasheet PDF : 16 Pages
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CM1630
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Units
Storage Temperature Range
−65 to +150
°C
DC Power per Resistor
100
mW
DC Package Power Rating
500
mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Rating
–40 to +85
Units
°C
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
R
Resistance
CTOTAL
Total Channel Capacitance
At 2.5 V DC Reverse Bias,
1 MHz, 30 mV AC
C
Capacitance C1
At 2.5 V DC Reverse Bias,
1 MHz, 30 mV AC
VDIODE
ILEAK
VSIG
VESD
Stand−off Voltage
Diode Leakage Current (Reverse Bias)
Signal Clamp Voltage
Positive Clamp
Negative Clamp
In−system ESD Withstand Voltage
a) Human Body Model, MIL−STD−883,
Method 3015
b) Contact Discharge per
IEC 61000−4−2 Level 4
IDIODE = 10 mA
VDIODE = 3.3 V
ILOAD = 10 mA
ILOAD = −10 mA
(Note 2)
RDYN
Dynamic Resistance
Positive
Negative
fC
A1GHz
Cut−off Frequency
ZSOURCE = 50 W, ZLOAD = 50 W
Absolute Attenuation @ 1 GHz from 0 dB Level
Channel R = 100 W,
Channel C = 8.5 pF
ZSOURCE = 50 W, ZLOAD = 50 W,
DC Bias = 0 V (Notes 1 and 3)
A800MHz − 6GHz Absolute Attenuation @ 800 MHz to 6 GHz
from 0 dB Level
ZSOURCE = 50 W, ZLOAD = 50 W,
DC Bias = 0 V (Notes 1 and 3)
1. TA = 25°C unless otherwise specified.
2. ESD applied to input and output pins with respect to GND, one at a time.
3. Attenuation / RF curves characterized by a network analyzer using microprobes.
Min Typ Max Units
80 100 120 W
14
17
22
pF
7.0 8.5 11.0 pF
6.0
V
0.1 1.0 mA
V
5.6 6.8
−0.4 −0.8
kV
±30
±15
W
2.3
0.9
MHz
200
30
dB
25
dB
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