DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

CM1442-06LP Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталоге
Компоненты Описание
производитель
CM1442-06LP Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
CM1442-06LP
Absolute Maximum Ratings
PARAMETER
Storage Temperature Range
DC Power per Resistor
DC Package Power Rating
RATING
-65 to +150
100
500
UNITS
°C
mW
mW
Standard Operating Conditions
PARAMETER
Operating Temperature Range
RATING
-40 to +85
UNITS
°C
Electrical Specifications
SYMBOL PARAMETER
R
CTOTAL
Resistance
Total Channel Capacitance
C
Capacitance C1
VDIODE
ILEAK
VSIG
VESD
RDYN
f
C
Standoff Voltage
Diode Leakage Current (reverse bias)
Signal Clamp Voltage
Positive Clamp
Negative Clamp
In-system ESD Withstand Voltage
a) Human Body Model, MIL-STD-883, Method
3015
b) Contact Discharge per IEC 61000-4-2 Level 4
Dynamic Resistance
Positive
Negative
Cut-off Frequency
ZSOURCE=50, ZLOAD=50
CONDITIONS
MIN
80
At 2.5VDC Reverse
24
Bias, 1MHz, 30mVAC
At 2.5VDC Reverse
12
Bias, 1MHz, 30mVAC
IDIODE=10µA
+ V = DIODE 3.3V
TYP
100
30
15
6.0
0.1
MAX
120
36
18
1
UNITS
pF
pF
V
µA
ILOAD = 10mA
ILOAD = -10mA
Notes 2 and 3
5.6 6.8 9.0
V
-1.5 -0.8 -0.4
V
±30
kV
±15
kV
R=100, C=15pF
2.3
0.9
115
MHz
Note 1: TA=25°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Unused pins are left open.
Rev. 3 | Page 3 of 10 | www.onsemi.com

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]