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CM1430 Просмотр технического описания (PDF) - ON Semiconductor

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CM1430 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
CM1430
STANDARD OPERATING CONDITIONS
PARAMETER
Operating Temperature Range
RATING
-40 to +85
UNITS
°C
ELECTRICAL OPERATING CHARACTERISTICS (SEE NOTE1)
SYMBOL PARAMETER
R
Resistance
C
Total Channel Capacitance
TOTAL
C
Capacitance C1
VDIODE
I
LEAK
V
SIG
Standoff Voltage
Diode Leakage Current (reverse bias)
Signal Clamp Voltage
Positive Clamp
Negative Clamp
VESD In-system ESD Withstand Voltage
a) Human Body Model, MIL-STD-883, Method
3015
b) Contact Discharge per IEC 61000-4-2 Level 4
RDYN
Dynamic Resistance
Positive
Negative
f
Cut-off Frequency
C
ZSOURCE=50Ω, ZLOAD=50Ω
CONDITIONS
MIN TYP
80 100
At 2.5VDC Reverse
14 17
Bias, 1MHz, 30mVAC
At 2.5VDC Reverse
7 8.5
Bias, 1MHz, 30mVAC
IDIODE=10μA
6.0
V =+3.3V
0.1
DIODE
ILOAD = 10mA
ILOAD = -10mA
Note 2
5.6 6.8
-1.5 -0.8
30
15
2.3
0.9
Channel R = 100Ω,
Channel C = 8.5pF
200
MAX UNITS
120
Ω
22
pF
11
pF
V
1.0
μA
9.0
V
-0.4
V
kV
kV
Ω
Ω
MHz
Note 1: TA=25°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Rev. 2 | Page 4 of 11 | www.onsemi.com

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