CM1293 Просмотр технического описания (PDF) - ON Semiconductor

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CM1293

8-Channel Low Capacitance ESD Protection Arrays

ON Semiconductor 

CM1293

Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)

Symbol

Parameter

Conditions

Min Typ Max

VP

Operating Supply Voltage (VP−VN)

IP

Operating Supply Current

VF

Diode Forward Voltage

Top Diode

Bottom Diode

(VP−VN) = 3.3 V

IF = 8 mA, TA = 25°C

3.3

5.5

8.0

0.60 0.80 0.95

0.60 0.80 0.95

ILEAK

CIN

DCIN

CMUTUAL

Channel Leakage Current

Channel Input Capacitance

Channel Input Capacitance Matching

Mutual Capacitance between Signal

Pin and Adjacent Signal Pin

TA = 25°C, VP = 5 V, VN = 0 V

At 1 MHz, VP = 3.3 V, VN = 0 V, VIN = 1.65 V

At 1 MHz, VP = 3.3 V, VN = 0 V, VIN = 1.65 V

At 1 MHz, VP = 3.3 V, VN = 0 V, VIN = 1.65 V

±0.1 ±1.0

1.0

1.5

0.02

0.11

VESD

ESD Protection

Peak Discharge Voltage at any

Channel Input, in System

Contact Discharge per

TA = 25°C (Notes 3 and 4)

±8

IEC 61000−4−2 Standard

VCL

Channel Clamp Voltage

Positive Transients

Negative Transients

TA = 25°C, IPP = 1 A, tP = 8/20 mS

(Note 4)

+8.8

−1.4

RDYN Dynamic Resistance

IPP = 1 A, tP = 8/20 mS

Positive Transients

Any I/O Pin to Ground (Note 4)

0.7

Negative Transients

0.4

1. All parameters specified at TA = −40°C to +85°C unless otherwise noted.

2. Human Body Model per MIL−STD−883, Method 3015, CDischarge = 100 pF, RDischarge = 1.5 KW, VP = 3.3 V, VN grounded.

3. Standard IEC 61000−4−2 with CDischarge = 150 pF, RDischarge = 330 W, VP = 3.3 V, VN grounded.

4. These measurements performed with no external capacitor on VP (VP floating).

Units

V

mA

V

mA

pF

pF

pF

kV

V

W

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