DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

CM1411 Просмотр технического описания (PDF) - California Micro Devices Corp

Номер в каталоге
Компоненты Описание
производитель
CM1411 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Specifications
PARAMETER
Storage Temperature Range
DC Power per Resistor
DC Package Power Rating
CM1411
ABSOLUTE MAXIMUM RATINGS
RATING
-65 to +150
100
200
UNITS
°C
mW
mW
PARAMETER
Operating Temperature Range
STANDARD OPERATING CONDITIONS
RATING
-40 to +85
UNITS
°C
ELECTRICAL OPERATING CHARACTERISTICS (SEE NOTE 1)
SYMBOL PARAMETER
R
Resistance
CONDITIONS
MIN TYP
9
10
MAX
11
UNITS
Ω
C
Capacitance
80 100
120
pF
ILEAK
VSIG
VESD
VCL
fC
Diode Leakage Current
Signal Voltage
Positive Clamp
Negative Clamp
In-system ESD Withstand Voltage
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-2
Level 4
Clamping Voltage during ESD Discharge
MIL-STD-883 (Method 3015), 8kV
Positive Transients
Negative Transients
Cut-off frequency
ZSOURCE = 50Ω, ZLOAD = 50Ω
VIN=5.0V
ILOAD = 10mA
Notes 2,4 and 5
Notes 2,3,4 and 5
R = 10Ω, C = 100pF
1.0
μA
5
7
15
V
-5 -10
-15
V
±15
kV
±8
kV
+15
V
-19
V
31
MHz
Note 1: TA=25°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin A1,
then clamping voltage is measured at Pin C1.
Note 4: Unused pins are left open
Note 5: These parameters are guaranteed by design and characterization.
© 2005 California Micro Devices Corp. All rights reserved.
09/15/05 490 N. McCarthy Blvd., Milpitas, CA 95035-5112 Tel: 408.263.3214 Fax: 408.263.7846 www.calmicro.com 3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]