CHX2095 Просмотр технического описания (PDF) - United Monolithic Semiconductors
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CHX2095 Datasheet PDF : 6 Pages
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CHX2095
7.5-30GHz Frequency Multiplier
Electrical Characteristics
These values are representative on wafer measurements
that are made without bonding wires at the RF ports.
Tamb = +25°C, Vd = 3.5V
Vg1 = Vg2 = -0.9V, Vg3 adjusted for Id = 75mA under RF Pin = +12dBm.
Symbol
Parameter
Min Typ
Fin Input frequency range
6.25
Fout Output frequency range
25
Pin Input power
12
Pout 4xFin Output power for +12dBm input power
8
11
Pout 1xFin Fin level at the output for +12dBm input power
0
(6.25 < Fin < 8.25GHz)
Pout 2xFin 2Fin level at the output for +12dBm input power
-10
(12.5 < 2Fin < 16.5GHz)
Pout 3xFin 3Fin level at the output for +12dBm input power
0
(18.75 < 3Fin < 24.75GHz)
Pout 5xFin 5Fin level at the output for +12dBm input power
0
(31.25 < 5Fin < 41.25GHz)
VSWRin Input VSWR
2.5:1
VSWRout Output VSWR
2.5:1
Id
Bias current
75
A wire bond of typically 0.1 to 0.15nH will improve the input and output matching.
Absolute Maximum Ratings
Tamb = +25°C
Max
8.25
33
14
2
3
12
Unit
GHz
GHz
dBm
dBm
dBm
dBm
dBm
dBm
mA
Symbol
Parameter
Vd
Supply voltage
Id
Supply current
Pin Input power
Ta
Operating temperature range
Tstg Storage temperature range
Values
4.0
150
20
-40 to +85
-55 to +125
Unit
V
mA
dBm
°C
°C
(1) Operation of device above anyone of these parameters may cause permanent damage.
Ref. : DSCHX20950036 - 05 Feb 10
2/6
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
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