CHA7012 Просмотр технического описания (PDF) - United Monolithic Semiconductors

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Компоненты Описание

производитель

CHA7012

X-band HBT High Power Amplifier

United Monolithic Semiconductors 

CHA7012

X-band High Power Amplifier

Assembly recommendations in test fixture

(using analog biasing circuits)

Vc

Vctrl

IN

100pF

10nF

OUT

1µF

Vctrl

100µF

Vc

Note: Supply feed should be capacitively by-passed. 25µm diameter gold wire is to be preferred.

Ordering Information

Chip form :

CHA7012-99F/00

Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S.

assumes no responsibility for the consequences of use of such information nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any

patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication

are subject to change without notice. This publication supersedes and replaces all information previously supplied.

United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life

support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.

Ref. : DSCHA70129082- 23 March 09

10/10

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Specifications subject to change without notice

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