CHA5295 Просмотр технического описания (PDF) - United Monolithic Semiconductors
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CHA5295 Datasheet PDF : 9 Pages
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CHA5295
24.5-26.5GHz High Power Amplifier
Bonding pad positions.
( Chip thickness : 50µm)
Application note
Due to 50µm thickness, specific care is requested for the handling and assembly.
Bias operation sequence:
ON: Supply Gate voltage
Supply Drain voltage
OFF: Cut off Drain voltage
Cut off Gate voltage
Ref. : DSCHA52953125 - 05 May 03
8/9
Specifications subject to change without notice
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