CHA2294 Просмотр технического описания (PDF) - United Monolithic Semiconductors

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CHA2294

35-40GHz Low Noise, Variable Gain Amplifier

United Monolithic Semiconductors 

35-40GHz LNA VGA

CHA2294

Electrical Characteristics for Broadband Operation

Tamb = +25°C, V5=Vd2=Vd,3,4=5V

Symbol

Parameter

Fop Operating frequency range

G

Small signal gain (1)

∆G Small signal gain flatness (1)

Is

Reverse isolation (1)

NF Noise figure with Vc=1.2V

Gctrl Gain control range versus Vc

P1dB Output power at 1dB compression with Vc=1.2V

VSWRin Input VSWR (1)

VSWRout Output VSWR (1)

Vd DC voltage

V5= Vd2=Vd3,4

Vc

Id1 Bias current (2) with Vc=1.2V

Id

Bias current total (3) with Vc=1.2V

Min Typ Max

35

40

20

22

±1.0

50

4

4.5

10

15

11

2.0:1

1.5:1

5

-1.5 [-0.7, +1.2] +1.3

20

120

Unit

GHz

dB

dB

dB

dB

dB

dBm

V

V

mA

mA

(1) These values are representative of on-wafer measurements that are made without bonding

wires at RF ports.

(2) For optimum noise figure, the bias current Id1 should be adjust to 20mA with Vg1 voltage.

(3) With Id1=20mA, adjust Vg2,3,4 voltage for a total drain current around 120mA.

Absolute Maximum Ratings

Tamb. =25°C (1)

Symbol

Parameter

Values

Unit

Vd

Maximum Drain bias voltage

+5.2

V

Id

Maximum drain bias current

200

mA

Vg

Gate bias voltage

-2.5 to +0.4

V

Vc

Maximum Control bias voltage

+1.5

V

Vdg

Maximum drain to gate voltage (Vd - Vg)

+5.0

V

Pin

Maximum input power overdrive (2)

+15

dBm

Tch

Maximum channel temperature

+175

°C

Ta

Operating temperature range

-40 to +85

°C

Tstg

Storage temperature range

-55 to +125

°C

(1) Operation of this device above anyone of these parameters may cause permanent damage.

(2) Duration < 1s.

Ref. : DSCHA22947165 - 14 Jun 07

2/6

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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