CHA2066-QAGXY Просмотр технического описания (PDF) - United Monolithic Semiconductors

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CHA2066-QAGXY

10-16GHz Low Noise Amplifier

United Monolithic Semiconductors 

10-16GHz Low Noise Amplifier

CHA2066-QAG

Electrical Characteristics (BE: High current biasing)

Tamb = +25°C, Vd = +4V

Symbol

Parameter

Fop Operating frequency range

G

Gain

∆G

Gain flatness

NF Noise figure

VSWRin Input VSWR

VSWRout Ouput VSWR (11 to 16 GHz)

IP3

P1dB

3rd order intercept point

Output power at 1dB gain compression

Id

Drain bias current

Min Typ Max Unit

10

16 Ghz

14

16

dB

± 1.5 ± 2.0 dB

3.0

3.5 dB

2.0 :1 3.0:1

1.5:1 2.0:1

20

21

dBm

13

14

dBm

70

80 mA

These values are representative of onboard measurements based on the propose characterization

board.

Ref. : DSCHA2066QAG6332 - 28 Nov 06

3/12

Specifications subject to change without notice

Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

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