CHA2066-QAGXY Просмотр технического описания (PDF) - United Monolithic Semiconductors
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CHA2066-QAGXY Datasheet PDF : 12 Pages
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CHA2066-QAG
10-16GHz Low Noise Amplifier
Electrical Characteristics (BD: Low current biasing)
Tamb = +25°C, Vd = +4V
Symbol
Parameter
Fop Operating frequency range
G
Gain
∆G
Gain flatness
NF
Noise figure
VSWRin Input VSWR
VSWRout Ouput VSWR (11 to 16 GHz)
IP3
P1dB
3rd order intercept point
Output power at 1dB gain compression
Id
Drain bias current
Min Typ Max Unit
10
16
Ghz
14
16
dB
± 1.5 ± 2.0 dB
2.5
3.0
dB
2.0 :1 3.0:1
1.5:1 2.0:1
17
18
dBm
9.0
10
dBm
50
65
mA
These values are representative of onboard measurements based on the propose characterization
board.
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Parameter (1)
Values
Vd
Drain bias voltage (2)
4.5
Pin
Maximum input power overdrive
-3.0
Rth_BD Thermal Resistance channel to ground paddle (3)
155
Rth_BE Thermal Resistance channel to ground paddle (3)
195
Top Operating temperature range
-40 to +85
Tstg Storage temperature range
-55 to +125
Unit
V
dBm
°C/W
°C/W
°C
°C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) For a typical biasing circuit: B & D grounded. See chip biasing option page 9/12.
(3) Thermal resistance for Tamb. = +85°C and a Tj m ax = +175°C.
Ref. : DSCHA2066QAG6332 - 28 Nov 06
2/12
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
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