CGY2014ATW Просмотр технического описания (PDF) - Philips Electronics
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CGY2014ATW Datasheet PDF : 12 Pages
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Philips Semiconductors
GSM/DCS/PCS power amplifier
Preliminary specification
CGY2014ATW
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VDD
Tj(max)
Tstg
Ptot
Pi(LB)
Pi(HB)
PARAMETER
supply voltage
maximum operating junction temperature
storage temperature
total power dissipation
GSM input power
DCS/PCS input power
CONDITIONS
note 1
MAX.
5.2
150
150
2.0
10
10
UNIT
V
°C
°C
W
dBm
dBm
Note
1. The total power dissipation is measured under GSM pulse conditions in a good thermal environment;
see Application Note (tbf).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
Rth(j-c)
thermal resistance from junction to case note 1
30
Note
1. This thermal resistance is measured under GSM pulse conditions in a good thermal environment;
see Application Note (tbf).
UNIT
K/W
DC CHARACTERISTICS
VDD = 3.5 V; Tamb = 25 °C; measured on the Philips application diagram (see Fig.3); general operating conditions
applied; peak current values measured during burst; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Supplies: pins VDD1(LB), VDD2(LB), RFO/VDD3(LB), VDD1(HB), VDD2(HB) and RFO/VDD3(HB)
VDD
supply voltage
note 1
0
IDD(LB)
GSM positive peak supply current
Pi(LB) = 5 dBm
−
IDD(HB)
DCS/PCS positive peak supply current
Pi(HB) = 5 dBm
−
IDD(lp)(LB)
GSM positive supply current
note 2
−
IDD(lp)(HB) DCS/PCS positive supply current
note 3
−
3.5 5.2 V
2
−
A
1.5 −
A
200 300 mA
200 300 mA
Notes
1. The supply circuit includes a (drain) MOS switch with RDSon = 40 mΩ. The battery voltage is 3.6 V (typical).
2. VDD1(LB) = 2.8 V; VDD1(LB) adjusted for Po(LB) = 15 dBm, this adjustment is typically 0.5V.
3. VDD1(HB) = 2.8 V; VDD1(HB) adjusted for Po(HB) = 15 dBm, this adjustment is typically 0.6V.
2000 Nov 28
5
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