CF739 Просмотр технического описания (PDF) - Siemens AG

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Компоненты Описание

производитель

CF739

GaAs FET

Siemens AG 

CF 739

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Drain-source breakdown voltage

ID = 100 µA, – VG1S = – VG2S = 4 V

Gate 1 leakage current

– VG1S = 5 V, VG2S = VDS = 0

Gate 2 leakage current

– VG2S = 5 V, VG1S = VDS = 0

Drain current

VG1S = 0, VG2S = 0, VDS = 3 V

Gate 1-source pinch-off voltage

VG2S = 0, VDS = 5 V, ID = 200 µA

Gate 2-source pinch-off voltage

VG1S = 0, VDS = 5 V, ID = 200 µA

V(BR)DS

10

–

– IG1SS –

–

– IG2SS –

–

IDSS

6

–

– VG1S(P) –

–

– VG2S(P) –

–

–

V

20

µA

20

60 mA

2.5 V

2.5

AC Characteristics

Forward transconductance

gfs

VDS = 5 V, VG2S = 2 V, ID = 10 mA, f = 1 kHz

–

25 –

mS

Gate 1 input capacitance

Cgfss

–

0.95 –

pF

VG2S = 2 V, VDS = 5 V, ID = 10 mA, f = 1 MHz

Output capacitance

VG2S = 2 V, VDS = 5 V, ID = 10 mA, f = 1 MHz

Cdss

–

0.5 –

Noise figure

F

VG2S = 2 V, VDS = 5 V, ID = 10 mA, f = 1.75 GHz

VG2S = 2 V, VDS = 5 V, ID = 10 mA, f = 800 MHz

dB

–

1.8 –

–

1.1 –

Power gain

Gps

VG2S = 2 V, VDS = 5 V, ID = 10 mA, f = 1.75 GHz

–

17 –

VG2S = 2 V, VDS = 5 V, ID = 10 mA, f = 800 MHz

–

22 –

Control range

VG2S = 2 V … – 3 V

∆ Gpsc

–

50 –

Semiconductor Group

2

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