CF5018 Просмотр технического описания (PDF) - Nippon Precision Circuits
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CF5018 Datasheet PDF : 8 Pages
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CF5018 series
Electrical Characteristics
VDD = 2.25 to 2.75V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Parameter
Symbol
Condition
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
Output leakage current
Current consumption
Standby current
INHN pull-up resistance
AC feedback resistance
DC feedback resistance
AC feedback capacitance
Built-in capacitance
VOH Q: Measurement cct 1, VDD = 2.25V, IOH = 8mA
VOL Q: Measurement cct 2, VDD = 2.25V, IOL = 8mA
VIH INHN
VIL INHN
IZ Q: Measurement cct 2, INHN = LOW
VOH = VDD
VOL = VSS
CF5018ALA
f = 30MHz
CF5018ALB
f = 40MHz
I DD
Measurement cct 3, load cct 1,
INHN = open, CL = 30pF
CF5018ALC
f = 50MHz
CF5018ALD
f = 60MHz
CF5018ALE
f = 80MHz
IST Measurement cct 3, INHN = LOW
RUP1
Measurement cct 4
RUP2
CF5018ALA
R f1
Design value. A monitor pattern on a
wafer is tested.
CF5018ALB
CF5018ALC
CF5018ALD
CF5018ALE
Rf2 Measurement cct 5
Cf Design value. A monitor pattern on a wafer is tested.
CG Design value. A monitor pattern on a wafer is tested.
CD
Design value. A monitor pattern on a
wafer is tested.
CF5018ALA
CF5018ALB
CF5018ALC
CF5018ALD
CF5018ALE
Rating
Unit
min
typ
max
1.65
1.95
–
V
–
0.3
0.4
V
0.7V DD
–
–
V
–
–
0.3V DD
V
–
–
10
µA
–
–
10
µA
–
6
12
mA
–
8
16
mA
–
10
20
mA
–
11
22
mA
–
15
30
mA
–
–
3
µA
2
6
12
MΩ
20
100
200
kΩ
3.99
4.7
5.41
kΩ
2.97
3.5
4.03
kΩ
2.97
3.5
4.03
kΩ
2.55
3.0
3.45
kΩ
2.97
3.5
4.03
kΩ
50
–
150
kΩ
8.5
10
11.5
pF
6.8
8
9.2
pF
12.7
15
17.3
pF
8.5
10
11.5
pF
SEIKO NPC CORPORATION —4
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