MPSA13 Просмотр технического описания (PDF) - Transys Electronics Limited
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MPSA13 Datasheet PDF : 2 Pages
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Transys
Electronics
LIMITED
NPN EPITAXIAL PLANAR DARLINGTON TRANSISTORS
MPSA 13
MPSA 14
TO-92
EBC
ABSOLUTE MAXIMUM RATINGS.
DESCRIPTION
SYMBOL
VALUE
Collector -Emitter Voltage
VCES
30
Collector -Base Voltage
VCBO
30
Emitter -Base Voltage
VEBO
10
Collector Current -Continuous
IC
500
Power Dissipation @ Ta=25 degC PD
625
Derate above 25 deg C
5.0
Power Dissipation @ Tc=25 degC PD
1.5
Derate above 25 deg C
12
Operating And Storage Junction
Tj, Tstg
-55 to +150
Temperature Range
THERMAL RESISTANCE
Junction to Case
Rth(j-c)
83.3
Junction to Ambient
Rth(j-a)
200
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
Min
Max
Collector -Emitter Voltage
VCES
IC=100uA,IB=0
30
-
Collector-Cut off Current
ICBO
VCB=30V, IE=0
-
100
Emitter-Cut off Current
IEBO
VEB=10V, IC=0
-
100
DC Current Gain
hFE*
MPSA13 IC=10mA,VCE=5V
5.0
-
MPSA14
10
-
MPSA13 IC=100mA,VCE=5V
MPSA14
Collector Emitter Saturation Voltage VCE(Sat)* IC=100mA, IB=0.1mA
Base Emitter On Voltage
VBE(on) * IC=100mA,VCE=5V
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
ft**
IC=10mA, VCE=5V
f=100MHz
*Pulse Test: Pulse Width=300us, Duty Cycle=2%
**ft=/hfe/*ftest.
10
-
20
-
-
1.5
-
2.0
.
125
-
UNIT
V
V
V
mA
mW
mW./deg C
W
mW./deg C
deg C
deg C/W
deg C/W
UNIT
V
nA
nA
K
K
K
K
V
V
MHz
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