PHC20306 Просмотр технического описания (PDF) - Philips Electronics
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производитель
PHC20306 Datasheet PDF : 8 Pages
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Philips Semiconductors
Complementary enhancement
mode MOS transistor
Objective specification
PHC20306
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
VALUE
20
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Per channel
V(BR)DSS
VGSth
IDSS
IGSS
RDSon
Ciss
Coss
Crss
QG
QGS
drain-source breakdown voltage
N-channel
VGS = 0; ID = 10 µA
30 −
−
V
P-channel
VGS = 0; ID = −10 µA
−30 −
−
V
gate-source threshold voltage
N-channel
VGS = VDS; ID = 1 mA
1
−
−
V
P-channel
VGS = VDS; ID = −1 mA
−1 −
−
V
drain-source leakage current
N-channel
VGS = 0; VDS = 24 V
−
−
100 nA
P-channel
gate leakage current
N-channel
VGS = 0; VDS = −24 V
VGS = ±20 V; VDS = 0
−
−
−100 nA
−
−
±100 nA
P-channel
−
−
±100 nA
drain-source on-state resistance
N-channel
VGS = 4.5 V; ID = 2 A
−
−
45 mΩ
P-channel
VGS = 10 V; ID = 4 A
VGS = −4.5 V; ID = −1.4 A
VGS = −10 V; ID = −2.8 A
−
−
30 mΩ
−
−
100 mΩ
−
−
65 mΩ
input capacitance
N-channel
P-channel
VGS = 0; VDS = 24 V; f = 1 MHz
VGS = 0; VDS = −24 V; f = 1 MHz
−
700 850 pF
−
tbf tbf pF
output capacitance
N-channel
P-channel
VGS = 0; VDS = 24 V; f = 1 MHz
VGS = 0; VDS = −24 V; f = 1 MHz
−
260 320 pF
−
tbf tbf pF
reverse transfer capacitance
N-channel
P-channel
VGS = 0; VDS = 24 V; f = 1 MHz
VGS = 0; VDS = −24 V; f = 1 MHz
−
110 135 pF
−
tbf tbf pF
total gate charge
N-channel
P-channel
VGS = 10 V; VDD = 15 V; ID = 4 A
−
VGS = −10 V; VDD = −15 V; ID = −2.8 A −
16 30 nC
tbf tbf nC
gate-source charge
N-channel
P-channel
VDD = 15 V; ID = 4 A
VDD = −15 V; ID = −2.8 A
−
2
−
nC
−
tbf −
nC
1998 Feb 18
4
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