CMM2032-BD Просмотр технического описания (PDF) - Celeritek, Inc.
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CMM2032-BD Datasheet PDF : 4 Pages
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CMM2032-BD
Advanced Product Information - February 2003
(2 of 4)
Absolute Maximum Ratings
Parameter
Rating
Drain Voltage
Gate Voltage
Drain Current
Continuous Power Dissipation
Channel Temperature
Storage Temperature
Mounting Temperature
Input Power
12 V
-5 V
375 mA
3.0 W
+175°C
-65°C to +175°C
+320°C
+23 dBm
Die Attach and Bonding Procedures
Die Attach: Eutectic die attach is recommended. For eutec-
tic die attach: Preform: AuSn (80% Au, 20% Sn); Stage
Temperature: 290°C, ±5°C; Handling Tool: Tweezers; Time: 1
min or less.
Wire Bonding: Wire Size: 0.7 to 1.0 mil in diameter (pre-
stressed); Thermocompression bonding is preferred over
thermosonic bonding. For thermocompression bonding:
Stage Temperature: 250°C; Bond Tip Temperature: 150°C;
Bonding Tip Pressure: 18 to 40 gms depending on size of
wire.
Typical Performance
P1dB vs Frequency
Performance Optimization
Using the Gain-Ctl facility of the CMM2032-BD, out-
put power may be increased by application of 1.2 to 1.8 Volts
to the Bias Control pad. If the Gain-Ctl facility is not used, a
fixed voltage at the Bias Control pad can be implemented by
connecting a off-chip parallel resistor to the pad which will
lower the output voltage accordingly.
If Bias Control voltage is decreased further than those
lowest values given in the tables, both gain and output power
will start to drop.
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Fax: (408) 986-5095
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