NEZ4450-4DD Просмотр технического описания (PDF) - NEC => Renesas Technology
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NEZ4450-4DD Datasheet PDF : 18 Pages
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4W/8W C-BAND Power-GaAs FET NEZ Series
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
110
100
Infinite Heat sink
90
80
70
60
50
–8D/–8DD
40
30 –4D/–4DD
20
10
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - ˚C
NEZ3642-4D
Pout
(dBm) OUTPUT POWER vs. INPUT POWER
ID
Test Conditions:
Pout
(A)
Freq = 3.9 (GHz),
2
35
VDS = 10.0 (V), IDS = 0.8 (A),
Pout: Pin = 27.0 (dBm),
GL: Pin = 20.0 (dBm),
Rg = 200 (Ω)
1
30
0
25
ID
15
20
25
Pin - Input Power - dBm
EFF
(%)
EFF
50
40
30
20
10
0
NEZ3642-8D/8DD
NEZ4450-4D/4DD
Pout
(dBm) OUTPUT POWER vs. INPUT POWER
ID 40 Test Conditions:
(A)
3
Freq = 3.9 (GHz),
VDS = 10.0 (V), IDS = 1.6 (A),
Pout: Pin = 31.0 (dBm),
Pout
GL: Pin = 20.0 (dBm),
Rg = 100 (Ω)
35
ID
2
Pout
(dBm) OUTPUT POWER vs. INPUT POWER
ID
Test Conditions:
(A)
Freq = 4.7 (GHz), VDS = 10.0 (V),
3
ID = 0.80 A, Rg = 200 Ω
Pout
35
2
30
30
1
25
0
20
25
30
Pin - Input Power - dBm
EFF
(%)
50
40
EFF
30
20
10
0
1
25
0
15
20
25
Pin - Input Power - dBm
ID EFF
(%)
50
EFF
40
30
20
10
0
30
5
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