NEZ3642-8DD Просмотр технического описания (PDF) - NEC => Renesas Technology
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NEZ3642-8DD Datasheet PDF : 18 Pages
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PRELIMINARY DATA SHEET
GaAs MES FET
4W/8W C-BAND POWER GaAs FET NEZ Series
4W/8W C-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION
PACKAGE DIMENSIONS (unit: mm)
The NEZ Series of microwave power GaAs FETs offer
high output power, high gain and high efficiency at C-band
for microwave and satellite communications.
Internal input and output circuits matched to 50 Ω are
designed to provide good flatness of gain and output power
in allocated band.
To reduce the thermal resistance, the device has a PHS
(Plated Heat Sink) structure.
NEC’s strigent quality assurance and test procedures
guarantee the highest reliability and performance.
SELECTION CHART
C1.5 4PLACES
SOURCE
R1.6 2PLACES
0.5±0.1
GATE
2.4
DRAIN
17.0±0.2
21.0±0.3
10.7
NEZ PART NUMBER
FREQUENCY BAND (GHz)
NEZ3642-4D, 8D, 8DD
3.6 to 4.2
NEZ4450-4D, 4DD/8D, 8DD
4.4 to 5.0
NEZ5964-4D, 4DD/8D, 8DD
5.9 to 6.45
12.0
NEZ6472-4D, 4DD/8D, 8DD
6.4 to 7.2
NEZ7177-4D, 4DD/8D, 8DD
7.1 to 7.7
NEZ7785-4D, 4DD/8D, 8DD
7.7 to 8.5
FEATURES
• Internally matched to 50 Ω
• High power output
• High linear gain
• High reliability
• Low distortion
Document No. P10981EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1996
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