IRFF110 Просмотр технического описания (PDF) - Intersil
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IRFF110 Datasheet PDF : 7 Pages
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IRFF110
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRFF110
100
100
3.5
14
±20
15
0.12
19
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250µA (Figure 10)
100
Gate Threshold Voltage
VGS(TH) VGS = VDS, ID = 250µA
2.0
Zero Gate Voltage Drain Current
IDSS VDS = Rated BVDSS, VGS = 0V
-
VDS = 100V, VGS = 0V, TJ = 125oC
-
On-State Drain Current (Note 2)
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
3.5
Gate to Source Leakage Current
IGSS VGS = ±20V
-
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
rDS(ON) VGS = 10V, ID = 1.5A (Figures 8, 9)
-
gfs
VDS > ID(ON) x rDS(ON)MAX, ID = 1.5A (Figure 12) 1.0
td(ON) VDD ≅ 0.5 x Rated BVDSS, ID ≈ 3.5A, RG = 9.1Ω
-
tr
VGS = 10V, RL = 13Ω (Figures 17, 18),
-
RL = 14Ω for VDS = 50V, RL = 23Ω for VDS = 80V,
td(OFF) MOSFET Switching Times are Essentially
-
tf
Independent of Operating Temperature
-
Qg(TOT) VGS = 10V, ID = 3.5A, VDS = 0.8 x Rated BVDSS,
-
IG(REF) = 1.5mA (Figures 14, 19, 20), Gate Charge is
Qgs
Essentially Independent of Operating Temperature
-
Gate to Drain “Miller” Charge
Input Capacitance
Qgd
-
CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 11)
-
Output Capacitance
COSS
-
Reverse Transfer Capacitance
CRSS
-
Internal Drain Inductance
Internal Source Inductance
LD
Measured from the Drain Modified MOSFET
-
Lead, 5.0mm (0.2in) from Symbol Showing the
Header to Center of Die Internal Device
LS
Measured from the Source Inductances
Lead, 5.0mm (0.2in) from
D
-
Header to Source Bonding
LD
Pad
G
LS
S
Thermal Resistance, Junction to Case
RθJC
-
Thermal Resistance, Junction to Ambient
RθJA Free Air Operation
-
TYP MAX UNITS
-
-
V
-
4.0
V
-
25
µA
-
250 µA
-
-
A
- ±100 nA
0.5 0.600 Ω
1.5
-
S
10 20
ns
15 25
ns
15 25
ns
10 20
ns
5.0 7.5 nC
2.0
-
nC
3.0
-
nC
135
-
pF
80
-
pF
20
-
pF
5.0
-
nH
15
-
nH
-
8.33 oC/W
-
175 oC/W
2
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