TQ8017 Просмотр технического описания (PDF) - TriQuint Semiconductor
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TQ8017 Datasheet PDF : 8 Pages
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TQ8017
Figure 1. TQ8017 Architecture
. DATA IN 0
(D0)
.
.
.
.
.
Input
Buffers
.
.
.
.
.
.
DATA IN 15
(D15)
16 X 1-BIT
MULTIPLEXER
16 X 1-BIT
MULTIPLEXER
DATA
OUT 0
(O0)
DATA
OUT 15
(O15)
CONFIGURE
RESET
LOAD
OUTPUT
4
4:16
DECODE
SELECT ADDRESS
(OA0:3)
5
Configuration
Register
Program Register
4 INPUT ADDRESS
(IA0:3)
Table 1. Absolute Maximum Ratings5
Symbol
TSTOR
TCH
TC
VCC
VTT
VIN
IIN
VIN
IIN
VOUT
IOUT
PD
Parameter
Storage Temperature
Junction (Channel) Temperature
Case Temperature Under Bias
Supply Voltage
Load Termination Supply Voltage
Voltage Applied to Any PECL Input; Continuous
Current Into Any PECL Input; Continuous
Voltage Applied to Any TTL/CMOS Input; Continuous
Current Into Any TTL/CMOS Input; Continuous
Voltage Applied to Any PECL Output
Current From Any PECL Output; Continuous
Power Dissipation per Output POUT = (GND – VOUT) x IOUT
Absolute Max. Rating
–65° C to +150° C
–65° C to +150° C
–65° C to +125° C
0 V to +7 V
VCC to 0 V
GND –0.5 V to VCC +0.5 V
–1.0 mA to +1.0 mA
–0.5 V to VCC +0.5 V
–1.0 mA to +1.0 mA
GND –0.5 V to VCC +0.5 V
–40 mA
50 mW
Notes
1
2
3
4
4
Notes: 1. For die applications.
2. TC is measured at case top.
3. All voltages specified with respect to GND, defined as 0V.
4. Subject to IOUT and power dissipation limitations.
5. Absolute maximum ratings, as detailed in this table, are the ratings beyond which the device's performance may be impaired
and/or permanent damage to the device may occur.
2
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