BZX55-C5V1 Просмотр технического описания (PDF) - General Semiconductor
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BZX55-C5V1 Datasheet PDF : 6 Pages
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BZX55-C0V8 THRU BZX55-C75
ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Type
BZX55 – C0V8(3)
BZX55 – C2V7
BZX55 – C3V0
BZX55 – C3V3
BZX55 – C3V6
BZX55 – C3V9
BZX55 – C4V3
BZX55 – C4V7
BZX55 – C5V1
BZX55 – C5V6
BZX55 – C6V2
BZX55 – C6V8
BZX55 – C7V5
BZX55 – C8V2
BZX55 – C9V1
BZX55 – C10
BZX55 – C11
BZX55 – C12
BZX55 – C13
BZX55 – C15
BZX55 – C16
BZX55 – C18
BZX55 – C20
BZX55 – C22
BZX55 – C24
BZX55 – C27
BZX55 – C30
BZX55 – C33
BZX55 – C36
BZX55 – C39
BZX55 – C43
BZX55 – C47
BZX55 – C51
BZX55-C56
BZX55-C62
BZX55-C68
BZX55-C75
Zener Voltage Dynamic resistance
range(1)
at
IZ = 5 mA
at
IZ = 5 mA
f = 1 kHz
at
IZ = 1mA
f = 1 kHz
VZ V
rzj Ω
rzj Ω
0.73 … 0.83
2.5 … 2.9
2.8 … 3.2
3.1 … 3.5
3.4 … 3.9
3.7 … 4.1
4.0 … 4.6
4.4 … 5.0
4.8 … 5.4
5.2 … 6.0
5.8 … 6.6
6.4 … 7.2
7.0 … 7.9
7.7 … 8.7
8.5 … 9.6
9.4 … 10.6
10.4 … 11.6
11.4 … 12.7
12.4 … 14.1
13.8 … 15.6
15.3 … 17.1
16.8 … 19.1
18.8 … 21.2
20.8 … 23.3
22.8 … 25.6
25.1 … 28.9
28 … 32
31 … 35
34 … 38
37 … 41(4)
40 … 46(4)
44 … 50(4)
48 … 54(4)
52.0 … 60.0(4)
58.0 … 66.0(4)
64.0 … 72.0(4)
70.0 … 79.0(4)
<8
< 85
< 85
< 85
< 85
< 85
< 75
< 60
< 35
< 25
< 10
<8
<7
<7
< 10
< 15
< 20
< 20
< 26
< 30
< 40
< 50
< 55
< 55
< 80
< 80
< 80
< 80
< 80
< 90(4)
< 90(4)
< 110(4)
< 125(4)
< 135(4)
< 150(4)
< 200(4)
< 250(4)
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500(5)
< 600(5)
< 700(5)
< 700(5)
< 1000(5)
< 1000(5)
< 1000(5)
< 1000(5)
Temp. coefficient
of Zener Voltage
at
IZ = 5 mA
αVZ %/K
min
max
– 0.25
–
– 0.08
– 0.06
– 0.08
– 0.06
– 0.08
– 0.05
– 0.08
– 0.04
– 0.07
– 0.03
– 0.04
– 0.01
– 0.03
+0.01
– 0.02
+0.05
– 0.01
+0.06
0
+0.07
+0.01
+0.08
+0.01
+0.09
+0.01
+0.09
+0.02
+0.10
+0.03
+0.11
+0.03
+0.11
+0.03
+0.11
+0.03
+0.11
+0.03
+0.11
+0.03
+0.11
+0.03
+0.11
+0.03
+0.11
+0.03
+0.11
+0.04
+0.12
+0.04
+0.12
+0.04
+0.12
+0.04
+0.12
+0.04
+0.12
+0.04
+0.12
+0.04
+0.12
+0.04
+0.12
+0.04
+0.12
typ. +0.1(4)
typ. +0.1(4)
typ. +0.1(4)
typ. +0.1(4)
Reverse leakage current
at
Tamb =
at
Tamb =
25°C
IR nA
150°C
IR µA
at
VR V
–
–
–
< 10000
< 50
1
< 4000
< 40
1
< 2000
< 40
1
< 2000
< 40
1
< 2000
< 40
1
< 1000
< 20
1
< 500
< 10
1
< 100
<2
1
< 100
<2
1
< 100
<2
2
< 100
<2
3
< 100
<2
5
< 100
<2
6
< 100
<2
7
< 100
<2
7.5
< 100
<2
8.5
< 100
<2
9
< 100
<2
10
< 100
<2
11
< 100
<2
12
< 100
<2
14
< 100
<2
15
< 100
<2
17
< 100
<2
18
< 100
<2
20
< 100
<2
22
< 100
<2
24
< 100
<2
27
< 100
<5
28
< 100
<5
32
< 100
<5
35
< 100
< 10
38
< 100
< 10
42
< 100
< 10
47
< 100
< 10
51
< 100
< 10
56
NOTES:
(1) Tested with pulses tp = 5 ms
(2) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case
(3) The BZX55–C0V8 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be “F” instead of “Z”.
Connect the cathode lead to the negative pole
(4) at IZ = 2.5 mA
(5) at IZ = 0.5 mA
Admissible
Zener
current(2)
IZM mA
–
135
125
115
105
95
90
85
80
70
64
58
53
47
43
40
36
32
29
27
24
21
20
18
16
14
13
12
11
10
9.2
8.5
7.8
7.0
6.4
5.9
5.3
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