BZV55 Просмотр технического описания (PDF) - Philips Electronics
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BZV55 Datasheet PDF : 12 Pages
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Philips Semiconductors
Voltage regulator diodes
Product specification
BZV55 series
103
handbook, halfpage
PZSM
(W)
102
MBG801
300
handbook, halfpage
IF
(mA)
200
MBG781
(1)
10
100
(2)
1
10−1
1
duration (ms) 10
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
Fig.3 Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
0
0.6
0.8
VF (V)
1.0
Tj = 25 °C.
Fig.4 Typical forward current as a function of
forward voltage.
0
handbook, halfpage
SZ
(mV/K)
−1
MBG783
4V3
3V9
3V6
−2
−3
0
3V3
3V0
2V4
2V7
20
40 IZ (mA) 60
BZV55-B/C2V4 to BZV55-B/C4V3.
Tj = 25 to 150 °C.
Fig.5 Temperature coefficient as a function of
working current; typical values.
2002 Feb 28
10
handbook, halfpage
SZ
(mV/K)
5
0
MBG782
12
11
10
9V1
8V2
7V5
6V8
6V2
5V6
5V1
4V7
−5
0
4
8
12
16
20
IZ (mA)
BZV55-B/C4V7 to BZV55-B/C12.
Tj = 25 to 150 °C.
Fig.6 Temperature coefficient as a function of
working current; typical values.
7
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