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M48T212V-85MH1(2000) Просмотр технического описания (PDF) - STMicroelectronics

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Компоненты Описание
производитель
M48T212V-85MH1
(Rev.:2000)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
M48T212V-85MH1 Datasheet PDF : 23 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
M48T212Y, M48T212V
Figure 3. Hardware Hookup
A0-A18
5V/3.3V
0.1µF
1N5817 (1)
A0-A3
VCC
VCCSW
MOTOROLA
MTD20P06HDL
A0-Axx
A
VOUT
0.1µF
E
EX
W
E1CON
G
Note 2
E2CON
WDI
RSTIN1
RSTIN2
RST
DQ0-DQ7 IRQ/FT
VSS
M48T212Y/V
VCC
E
CMOS
SRAM
A0-Axx
VCC
E
CMOS
SRAM
Note: 1. See description in Power Supply Decoupling and Undershoot Protection.
2. Traces connecting E1CON and E2CON to external SRAM should be as short as possible.
AI03046
Figure 4. AC Testing Load Circuit
DEVICE
UNDER
TEST
645
Table 5. AC Measurement Conditions
Input Rise and Fall Times
5ns
Input Pulse Voltages
0 to 3V
Input and Output Timing Ref. Voltages
1.5V
Note that Output Hi-Z is defined as the point where data
is no longer driven.
CL = 100pF or 5pF (1)
CL = 30 pF (2)
1.75V
CL includes JIG capacitance
Note: 1. DQ0-DQ7
2. E1CON and E2CON
4/23
AI03239

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