BZD27C82P-M3-08 Просмотр технического описания (PDF) - Vishay Semiconductors
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BZD27C82P-M3-08 Datasheet PDF : 7 Pages
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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
BZD27-M Series
Vishay Semiconductors
10
Typ. VF
1
Max. VF
IRSM
(%)
100
90
50
t1 = 10 µs
t2 = 1000 µs
0.1
0.6 0.8 1.0 1.2 1.4 1.6
17411
VF - Forward Voltage (V)
Fig. 1 - Forward Current vs. Forward Voltage
10 000
C5V1P C6V8P C12P C18P
1000
10
t1
t
17415
t2
Fig. 4 - Non-Repetitive Peak Reverse Current Pulse Definition
100
C27P
C51P
C200P
10
0 0.5 1.0 1.5 2.0 2.5 3.0
17412
VR - Reverse Voltage (V)
Fig. 2 - Typ. Diode Capacitance vs. Reverse Voltage
3.0
2.5
RthJL = 30K/W
2.0
1.5
1.0 RthJA = 180K/W
0.5
0
0
22774
25 50 75 100 125 150 175
Tamb - Ambient Temperature (°C)
Fig. 3 - Power Dissipation vs. Ambient Temperature
Rev. 1.6.,18-Mar-15
4
Document Number: 85155
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