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BYW81PI-200 Просмотр технического описания (PDF) - STMicroelectronics

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производитель
BYW81PI-200 Datasheet PDF : 6 Pages
1 2 3 4 5 6
BYW81P-200 / BYW81PI-200 / BYW81G-200
Fig. 1: Average forward power dissipation versus
average forward current.
Fig. 2: Peak current versus form factor.
PF(av)(W)
20.0
17.5
=0.05
=0.1 =0.2
=0.5
=1
15.0
12.5
10.0
7.5
T
5.0
2.5
IF(av)(A)
=tp/T
tp
0.0
0 2.5 5 7.5 10 12.5 15 17.5 20
IM(A)
350
300
250
200
150
100
P=10W
P=20W
50
P=30W
T
IM
=tp/T
tp
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Fig. 3: Forward voltage drop versus forward
current (maximum values).
VFM(V)
1.8
1.6
T j = 1 2 5 oC
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
1
IFM(A)
10
100 200
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration.
K
1.0
Zth(j-c) (tp. )
K=
Rth(j-c)
0.5
=0.5
=0.2
=0.1
T
0.2
Single pulse
0.1
1.0E-03
tp(s)
1.0E-02
1.0E-01
=tp/T
tp
1.0E+00
Fig. 5: Non repetitive surge peak forward current
versus overload duration.
(BYW81P)
160 IM(A)
150
140
130
120
110
100
90
80
70
60
50
40 IM
30
20
t
10
=0.5
t(s)
0
0.001
0.01
0.1
Tc=25 oC
Tc=75 oC
Tc=115 oC
1
Fig. 6: Non repetitive surge peak forward current
versus overload duration.
(BYW81PI / BYW81G)
IM(A)
120
110
100
90
80
70
60
50
40
30 IM
20
10
0
0.001
t
=0.5
t(s)
0.01
0.1
Tc=25 oC
Tc=60 oC
Tc=90 oC
1
3/6

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