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Компоненты Описание
BYW81G-200 Просмотр технического описания (PDF) - STMicroelectronics
Номер в каталоге
Компоненты Описание
производитель
BYW81G-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
STMicroelectronics
BYW81G-200 Datasheet PDF : 6 Pages
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BYW81P-200 / BYW81PI-200 / BYW81G-200
THERMAL RESISTANCE
Symbol
Rth (j-c)
Junction to case
Parameter
BYW81P
BYW81PI / G
Value
2.0
3.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
Test Conditions
I
R
*
T
j
= 25°C
V
R
= V
RRM
V
F **
T
j
= 100°C
T
j
= 125°C
I
F
= 12 A
T
j
= 125°C
I
F
= 25 A
T
j
= 25°C
Pulse test :
* tp = 5 ms, duty cycle < 2 %
** tp = 380
µ
s, duty cycle < 2 %
I
F
= 25 A
Min. Typ. Max. Unit
20
µ
A
1.5 mA
0.85 V
1.05
1.15
RECOVERY CHARACTERISTICS
Symbol
Test Conditions
Min. Typ. Max. Unit
trr
T
j
= 25°C
I
F
= 0.5A
I
R
= 1A
Irr = 0.25A
25 ns
I
F
= 1A
dI
F
/dt = -50A/
µ
s
40
V
R
= 30V
tfr
T
j
= 25°C
I
F
= 1A
V
FR
= 1.1 x V
F
tr = 10 ns
15
ns
V
FP
T
j
= 25°C
I
F
= 1A
tr = 10 ns
2
V
2/6
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