BYV74 Просмотр технического описания (PDF) - Philips Electronics
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BYV74 Datasheet PDF : 6 Pages
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Philips Semiconductors
Dual rectifier diodes
ultrafast
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-hs
Rth j-a
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
per diode
both diodes conducting
in free air.
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
VF
Forward voltage (per diode)
IR
Reverse current (per diode)
CONDITIONS
IF = 15 A; Tj = 150˚C
IF = 15 A
IF = 30 A
VR = VRRM
VR = VRRM; Tj = 100 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
Qs
Reverse recovery charge (per
diode)
trr
Reverse recovery time (per
diode)
Irrm
Peak reverse recovery current
(per diode)
Vfr
Forward recovery voltage (per
diode)
CONDITIONS
IF = 2 A to VR ≥ 30 V;
dIF/dt = 20 A/µs
IF = 1 A to VR ≥ 30 V;
dIF/dt = 100 A/µs
IF = 10 A to VR ≥ 30 V;
dIF/dt = 50 A/µs; Tj = 100˚C
IF = 10 A; dIF/dt = 10 A/µs
Product specification
BYV74 series
MIN.
-
-
-
TYP.
-
-
45
MAX.
2.4
1.4
-
UNIT
K/W
K/W
K/W
MIN.
-
-
-
-
-
TYP.
0.95
1.08
1.15
10
0.3
MAX.
1.12
1.25
1.36
50
0.8
UNIT
V
V
V
µA
mA
MIN. TYP. MAX. UNIT
-
40 60 nC
-
50 60 ns
-
4.2 5.2 A
-
2.5
-
V
August 1996
2
Rev 1.200
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