BYV1040 Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге

Компоненты Описание

производитель

BYV1040

SMALL SIGNAL SCHOTTKY DIODES

STMicroelectronics 

BYV 10-40

ELECTRICAL CHARACTERISTICS

STATIC CHARACTERISTICS

Symbol

IR *

Tj = 25°C

Tj = 100°C

VF *

IF = 1A

IF = 3A

* Pulse test: tp ≤ 300µs δ < 2%.

Test Conditions

VR = VRRM

Tj = 25°C

DYNAMIC CHARACTERISTICS

Symbol

Test Conditions

C

Tj = 25°C

VR = 0

Min. Typ. Max. Unit

0.5

mA

10

0.55

V

0.85

Min. Typ. Max. Unit

220

pF

Forward current flow in a Schottky rectifier is due to

majority carrier conduction. So reverse recovery is

not affected by stored charge as in conventional PN

junction diodes.

Nevertheless, when the device switches from for-

ward biased condition to reverse blocking state,

current is required to charge the depletion capaci-

tance of the diode.

Fig.1 : Forward current versus forward

voltage at low level (typical values).

This current depends only of diode capacitance and

external circuit impedance. Satisfactory circuit be-

haviour analysis may be performed assuming that

Schottky rectifier consists of an ideal diode in pa-

rallel with a variable capacitance equal to the junc-

tion capacitance (see fig. 5 page 4/4).

Fig.2 : Forward current versus forward

voltage at high level (typical values).

2/4

Share Link: