BYT60P-400 Просмотр технического описания (PDF) - STMicroelectronics
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BYT60P-400 Datasheet PDF : 7 Pages
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BYT60P-400 / BYT260PIV-400 / BYT261PIV-400
Fig. 5-1: Relative variation of thermal impedance
junction to case versus pulse duration (per diode
for ISOTOP).
Fig. 5-2: Relative variation of thermal impedance
junction to case versus pulse duration (SOD93).
K=[Zth(j-c)/Rth(j-c)]
1.0
K=[Zth(j-c)/Rth(j-c)]
1.0
0.5 δ = 0.5
δ = 0.2
0.2 δ = 0.1
Single pulse
0.1
1E-3
T
1E-2
tp(s)
1E-1
δ=tp/T
tp
1E+0
0.5 δ = 0.5
δ = 0.2
0.2
δ = 0.1
Single pulse
0.1
1E-3
T
1E-2
tp(s)
1E-1
δ=tp/T
tp
1E+0
Fig. 6: Forward voltage drop versus forward
current (maximum values, per diode for ISOTOP).
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode for
ISOTOP).
IFM(A)
500
100
Typical values
Tj=100°C
C(pF)
200
180
160
Tj=25°C
140
10
Tj=100°C
120
100
80
VFM(V)
1
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
1
F=1MHz
Tj=25°C
VR(V)
10
100 200
Fig. 8: Recovery charges versus dIF/dt (per diode
for ISOTOP).
Fig. 9: Recovery current versus dIF/dt (per diode
for ISOTOP).
Qrr(µC)
1.6
1.4
1.2
IF=IF(av)
90% confidence
Tj=100°C
1.0
0.8
0.6
0.4
0.2
0.0
10
20
dIF/dt(A/µs)
50
100
200
IRM(A)
50
IF=IF(av)
90% confidence
Tj=100°C
10
1
500
10
20
dIF/dt(A/µs)
50
100
200
500
4/7
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