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BYT60P-400 Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге
Компоненты Описание
производитель
BYT60P-400
ST-Microelectronics
STMicroelectronics ST-Microelectronics
BYT60P-400 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
BYT60P-400 / BYT260PIV-400 / BYT261PIV-400
Fig. 1: Average forward power dissipation versus
average forward current (per diode, for ISOTOP).
Fig. 2: Peak current versus form factor (per diode,
for ISOTOP).
PF(av)(W)
110
100
90
80
70
60
50
40
30
20
10
0
0
δ = 0.1
δ = 0.2
δ = 0.05
δ = 0.5
δ=1
T
IF(av) (A)
δ=tp/T
tp
10 20 30 40 50 60 70 80
IM(A)
350
300
P=75W
T
250
200
150
P=100W
δ=tp/T
tp
100 P=50W
50
P=25W
δ
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Fig. 3: Average forward current versus ambient
temperature (δ=0.5, per diode for ISOTOP).
IF(av)(A)
70
Rth(j-a)=Rth(j-c)
60
50
ISOTOP
SOD93
40
Rth(j-a)=2.5°C/W
30
20
T
10
0
0
δ=tp/T
tp
25
Tamb(°C)
50
75
100
125
150
Fig. 4-1: Non repetitive surge peak forward current
versus overload duration (SOD93).
Fig. 4-2: Non repetitive surge peak forward current
versus overload duration (per diode, for ISOTOP).
IM(A)
450
400
350
300
250
200
150
100 IM
50
t
δ=0.5
0
1E-3
1E-2
Tc=50°C
Tc=25°C
Tc=75°C
t(s)
1E-1
1E+0
IM(A)
400
350
300
250
200
150
100 IM
50
t
δ=0.5
0
1E-3
1E-2
Tc=50°C
Tc=25°C
Tc=75°C
t(s)
1E-1
1E+0
3/7

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