BYT60P-400 Просмотр технического описания (PDF) - STMicroelectronics

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производитель

BYT60P-400

FAST RECOVERY RECTIFIER DIODES

STMicroelectronics 

BYT60P-400 / BYT260PIV-400 / BYT261PIV-400

THERMAL RESISTANCES

Symbol

Rth(j-c) Junction to case

Parameter

ISOTOP

Per diode

Total

Rth(c)

SOD93

Total

Coupling

When the diodes 1 and 2 are used simultaneously :

∆ Tj(diode 1) = P(diode) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Value

0.8

0.45

0.7

0.1

Unit

°C/W

°C/W

Symbol

VF *

IR **

Parameter

Forward voltage drop

Reverse leakage cur-

rent

Test Conditions

Tj = 25°C

IF = 60 A

Tj = 100°C

Tj = 25°C

VR = VRRM

Tj = 100°C

Pulse test : * tp = 380 µs, δ < 2%

** tp = 5 ms, δ < 2%

Min. Typ. Max. Unit

1.5

V

1.4

60

µA

6

mA

To evaluate the conduction losses use the following equation:

P = 1.1 x IF(AV) + 0.0045 IF2(RMS)

RECOVERY CHARACTERISTICS (per diode)

Symbol

trr

Tj = 25°C

Test Conditions

IF = 1A VR = 30V dIF/dt = - 15A/µs

IF = 0.5A IR = 1A Irr = 0.25A

Min. Typ. Max. Unit

100 ns

50

TURN-OFF SWITCHING CHARACTERISTICS

Symbol

tIRM

IRM

Parameter

Maximum reverse

recovery time

Maximum reverse

recovery current

C = VRP

VCC

Turn-off overvoltage

coefficient

Test Conditions

dIF/dt = - 240 A/µs

dIF/dt = - 480 A/µs

dIF/dt = - 240 A/µs

dIF/dt = - 480 A/µs

VCC = 200 V

IF = 60 A

Lp ® 0.05 µH

Tj = 100°C

(see fig. 13)

Tj = 100°C VCC = 120V IF = IF(AV)

dIF/dt = - 60A/µs Lp = 0.8µH

(see fig. 14)

Min. Typ. Max. Unit

75 ns

50

18 A

24

3.3 4 /

2/7

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