BUZ902DP Просмотр технического описания (PDF) - Unspecified

Номер в каталоге

Компоненты Описание

производитель

BUZ902DP

N–CHANNEL POWER MOSFET

Unspecified 

MAGNA

TEC

BUZ902DP

BUZ903DP

STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

Characteristic

Test Conditions

BVDSX

Drain – Source Breakdown Voltage VGS = -10V

BUZ902DP

ID = 10mA

BUZ903DP

BVGSS Gate – Source Breakdown Voltage VDS = 0

IG = ±100µA

VGS(OFF)

VDS(SAT)*

RDS(on)*

Gate – Source Cut–Off Voltage

Drain – Source Saturation Voltage

Static – Source Resistance

VDS = 10V

VGD = 0

VGS = 10

ID = 100mA

ID = 16A

ID = 16A

VDS = 220V

BUZ902DP

IDSX

Drain – Source Cut–Off Current VGS = -10V

VDS = 250V

BUZ903DP

yfs*

Forward Transfer Admittance

VDS = 10V

ID = 3A

Min.

220

250

±14

0.10

Typ.

Max.

1.5

12

0.75

10

Unit

V

V

V

V

V

Ω

mA

10 mA

1.4

4

S

DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

Characteristic

Test Conditions

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VDS = 10V

f = 1MHz

ton

Turn–on Time

VDS = 20V

toff

Turn-off Time

ID = 7A

* Pulse Test: Pulse Width = 300µs , Duty Cycle ≤ 2%.

Min.

Typ.

TBA

TBA

TBA

TBA

TBA

Max. Unit

pF

ns

D

G

S

Magnatec. Telephone (01455) 554711. Fax (01455) 558843

Prelim. 01/97

Share Link: