BUZ385 Просмотр технического описания (PDF) - Siemens AG
Номер в каталоге
Компоненты Описание
производитель
BUZ385 Datasheet PDF : 9 Pages
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BUZ 385
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
20
Ptot = 125W
A
ID
16
14
12
10
8
6
4
l
kj i h g f
e VGS [V]
a 4.0
b 4.5
c 5.0
d 5.5
d e 6.0
f 6.5
g 7.0
c h 7.5
i 8.0
j 9.0
k 10.0
l 20.0
b
2
a
0
0
4
8 12 16 20 V 28
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
18
A
ID
14
12
10
8
6
4
2
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
2.6
Ωa
b
c
d
e
2.2
RDS (on) 2.0
1.8
1.6
1.4
1.2
1.0
f
0.8
0.6
h
j
l
g
i
k
0.4 VGS [V] =
0.2
abcdef
4.0 4.5 5.0 5.5 6.0 6.5
0.0
ghi j
7.0 7.5 8.0 9.0
kl
10.0 20.0
0 2 4 6 8 10 12 14 16 A 19
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
10
S
gfs
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 A 16
ID
Semiconductor Group
6
07/96
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