BUZ385 Просмотр технического описания (PDF) - Siemens AG

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производитель

BUZ385

SIPMOS® Power Transistor

Siemens AG 

BUZ 385

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

min.

Values

typ.

max.

Dynamic Characteristics

Transconductance

VDS≥ 2 * ID * RDS(on)max, ID = 6.5 A

Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Reverse transfer capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Turn-on delay time

VDD = 30 V, VGS = 10 V, ID = 2.8 A

RGS = 50 Ω

Rise time

VDD = 30 V, VGS = 10 V, ID = 2.8 A

RGS = 50 Ω

Turn-off delay time

VDD = 30 V, VGS = 10 V, ID = 2.8 A

RGS = 50 Ω

Fall time

VDD = 30 V, VGS = 10 V, ID = 2.8 A

RGS = 50 Ω

gfs

2.7

Ciss

-

Coss

-

Crss

-

td(on)

-

tr

-

td(off)

-

tf

-

6.7

-

3800 4900

250

400

100

170

50

75

80

120

330

430

110

140

Unit

S

pF

ns

Semiconductor Group

3

07/96

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